Today thin films are basic element in the number of common and
also quite rare applications. They can be found in integrated
circuit manufacturing industry, optics and integrated optics,
telecommunications and wireless communications.
Significant part of scientific and research potential of
Department of General and Inorganic Chemistry is focused on
changes in physical and chemical properties of amorphous
chalcogenide thin films caused by photoinduced structural changes
in these films.
With a recent rapid development of advanced technologies as
nanotechnology and in particular photonics, there is strong need
for highly miniaturized microoptical elements usable for
fabrication and characterization of small components. If elements
with characteristic dimensions smaller than wavelength of used
light can be prepared, one can expect very high efficiencies and
also other interesting behavior in particular with regard to
polarization and near-field diffraction.
But for such small elements one will reach soon the physical
limits of traditional diffractive elements materials and
Advanced methods as holographic exposures, laser or e-beam
lithography can break these limits, but their usage brings some
fully new problems. For instance the requirements for clean-rooms,
high purity chemicals and experimental equipment necessary for
manufacturing and characterization of prepared diffractive
elements are extremely high. Due to such high economic demands, it
seems to be reasonable to solve such multidisciplinary projects in
an international cooperation.
The main aim of following thesis is theoretically simulate and
experimentally test the possibilities and limits of mentioned
advanced methods for fabrications of submicron diffractive
elements. Mainly thanks to very high index of refraction,
photoinduced changes and broad spectral region of transparency the
used As-S materials have significant advantages, for example the
depth of diffractive structures can be approximately three times
lover that for common materials.